Electrical noise as a reliability indicator in electronic devices and components

Low-frequency electrical noise is well accepted as a very sensitive measure of the quality and reliability of electrical components and electronic devices. It shows changes in magnitude very much greater than in the static electrical properties. The excess noise is due to defects and non-ideality in the device. Although the excess noise is a general indicator of quality there can be many physical processes that could be involved. These noise contributions are additive and therefore not easy to distinguish so that the noise is not so valuable as a diagnostic tool. Also, there is not a detailed understanding of some noise sources, such as in some semiconductor devices. Recently devices have continued to become smaller in size so that the noise signal has become more significant compared to the real signal and the number of individual defects involved has become fewer. This has resulted in a growing trend to the study of the time varying signal rather than the noise spectral density. A review is given of the developments in the subject over the last few years.

[1]  M. J. Deen,et al.  Low-frequency noise in single growth planar separate absorption, grading, charge, and multiplication avalanche photodiodes , 2000 .

[2]  A. M. Zaklikiewicz.  LF noise and reliability of Gunn diodes , 1998, 12th International Conference on Microwaves and Radar. MIKON-98. Conference Proceedings (IEEE Cat. No.98EX195).

[3]  Alicja Konczakowska.  1/f noise of electrolytic capacitors as a reliability indicator , 1998 .

[4]  Doru Ursutiu,et al.  Low-frequency noise used as a lifetime test of LEDs , 1996 .

[5]  C.-P. Czaya,et al.  Low-cost direct chip attach: comparison of SMD compatible FC soldering with anisotropically conductive adhesive FC bonding , 2000 .

[6]  Cor Claeys,et al.  On the flicker noise in submicron silicon MOSFETs , 1999 .

[7]  Cor Claeys,et al.  Hot-carrier stress effects on the amplitude of Random Telegraph Signals in small area Si p-MOSFETS , 1997 .

[8]  B. Jones,et al.  Spectroscopy of surface states using the excess noise in a buried-channel MOS transistor , 1992 .

[9]  P. T. Lai,et al.  Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFETs , 2000 .

[10]  Chong-Gun Yu,et al.  RF performance degradation in nMOS transistors due to hot carrier effects , 2000 .

[11]  Nathalie Labat,et al.  Comparison of RF and DC life-test effects on GaAs power MESFETs , 2000 .

[12]  Dionyz Pogany,et al.  Random telegraph signal noise instabilities in lattice-mismatched InGaAs/InP photodiodes , 1999 .

[13]  M. Tutt,et al.  Screening for early and rapid degradation in GaAs/AlGaAs HBTs , 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

[14]  Bruno Neri,et al.  Characterization of Al-Si-Cu metal lines by means of tem analysis and the sarf technique , 1997 .

[15]  Zoltan Gingl,et al.  Biased percolation and electrical breakdown , 1997 .

[16]  M. M Jevtić,et al.  Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions , 1997 .

[17]  Jean Brini,et al.  Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors , 2000 .

[18]  Alvin J. Joseph,et al.  Correlation of low-frequency noise and emitter-base reverse-bias stress in epitaxial Si- and SiGe-base bipolar transistors , 1995, Proceedings of International Electron Devices Meeting.

[19]  Tgm Theo Kleinpenning.  1/f-noise in single injection diodes , 1978 .

[20]  Cor Claeys,et al.  Noise as a Diagnostic Tool for Semiconductor Material and Device Characterization , 1998 .

[21]  K. Y. Tong,et al.  Studies of high DC current induced degradation in III-V nitride based heterojunctions , 2000 .

[22]  Jiansheng Xu,et al.  The noise analysis and noise reliability indicators of optoelectron coupled devices , 2000 .

[23]  M. Schulz,et al.  Individual interface traps at the Si-SiO2 interface , 1994 .

[24]  Sh. Kogan,et al.  Electronic noise and fluctuations in solids , 1996 .

[25]  Daniel M. Fleetwood,et al.  1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices , 1997 .

[26]  Michael J. Uren,et al.  Random telegraph signals from liquid helium to room temperature , 1993 .

[27]  Dai Yisong,et al.  An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers , 1994 .

[28]  I. Mrak,et al.  Low-frequency noise in thick-film structures caused by traps in glass barriers , 1998 .

[29]  Linda M. Head,et al.  Instrumentation effects on the detection of resistance transients during accelerated testing of VLSI interconnects , 2000, IEEE Trans. Instrum. Meas..

[30]  L. Vandamme,et al.  1/f noise as a diagnostic tool to investigate the quality of isotropic conductive adhesive bonds , 1999 .

[31]  Bruno Neri,et al.  Low frequency noise evolution during lifetime tests of lines and vias subjected to electromigration , 2000 .

[32]  L. T. Koh,et al.  Low-frequency noise measurement of copper damascene interconnects , 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).

[33]  M. M Jevtić.  Anomalous I–V and pulse noise in reverse biased p–n junctions , 1998 .

[34]  Lode K. J. Vandamme,et al.  Noise as a diagnostic tool for quality and reliability of electronic devices , 1994 .

[35]  Alicja Konczakowska.  Quality and 1/f noise of electronic components , 1995 .

[36]  Bruno Neri,et al.  Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices , 2000 .

[37]  Cor Claeys,et al.  Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs , 1999 .

[38]  Adriano Cola,et al.  A percolative simulation of dielectric-like breakdown , 1998 .

[39]  Daniel M. Fleetwood,et al.  Correlation between latent interface trap buildup and 1/f noise in metal–oxide–semiconductor transistors , 1997 .

[40]  Safa Kasap,et al.  1/f noise in bismuth ruthenate based thick-film resistors , 1997 .

[41]  Rashid Bashir,et al.  Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors , 1998 .

[42]  R. Z. Bakhtizin,et al.  Autocorrelation function of 1/f current fluctuations in vacuum microelectronics devices , 1996 .

[43]  G. P. Zhigal'skii,et al.  Nonequilibrium flicker noise in tantalum-based thin-film resistors , 1999 .

[44]  Bruno Neri,et al.  Copper interconnection lines: SARF characterization and lifetime test , 1996 .

[45]  L.K.J. Vandamme,et al.  Resistance noise measurement: A better diagnostic tool to detect stress and current induced degradation , 1997 .

[46]  Marc Ilegems,et al.  Low-frequency noise in electrically stressed n-MOSFETs , 1999 .

[47]  J. A. Kokkedee,et al.  Discrete resistance fluctuations in pressure-type point contacts , 1993 .

[48]  Bruno Neri,et al.  Wafer level measurement system for SARF characterization of metal lines , 1996 .

[49]  A. P. Dorey.  Rapid Reliability Assessment of VLSICs , 1990 .

[50]  Zoltan Gingl,et al.  A biased percolation model for the analysis of electronic-device degradation , 1997, 1997 21st International Conference on Microelectronics. Proceedings.

[51]  Alan Mathewson,et al.  The impact of oxide degradation on the low frequency (I/F) noise behaviour of P channel MOSFETS , 1996 .

[52]  Saeed Mohammadi,et al.  Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs , 2000 .

[53]  Zoltan Gingl,et al.  Excess thermal-noise in the electrical breakdown of random resistor networks , 1999 .

[54]  B. Jones,et al.  Low-frequency noise spectroscopy , 1994 .

[55]  John D. Cressler,et al.  Comparison of current gain and low-frequency noise degradation by hot electrons and hot holes under reverse EB stress in UHV/CVD SiGe HBTs , 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

[56]  A. Drapella.  Mathematical model for the noise–lifetime relationship and its application to reliability screening , 2000 .

[57]  V. R. Gal'chenko,et al.  Diagnostics of large-scale integrated circuits based on complementary metal-oxide-semiconductor structures using LF fluctuations of the consumption current , 2000 .

[58]  Cor Claeys,et al.  The low-frequency noise behaviour of silicon-on-insulator technologies , 1996 .

[59]  Bruno Neri,et al.  Comments on the utilization of noise measurements for the characterization of electromigration in metal lines , 1997 .

[60]  Y. Z. Xu,et al.  Measurement of the electrical properties of electromigration specimens , 1995 .

[61]  L.K.J. Vandamme,et al.  1/f noise as a reliability estimation for solar cells , 1983 .

[62]  A. Kawasaki,et al.  An interface state mediated junction leakage mechanism induced by a single polyhedral oxide precipitate in silicon diode , 1999 .

[63]  Hans L. Hartnagel,et al.  Characterization of anisotropically conductive adhesive interconnections by 1/f noise measurements , 1997 .

[64]  Andrea Neviani,et al.  Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications , 2000 .

[65]  A. Konczakowska,et al.  The coherence of the gate and drain noise in stressed AlGaAs-InAlGaAs PHEMTs , 2001, Microelectron. Reliab..

[66]  Giuseppe Iannaccone,et al.  Shot noise partial suppression in the SILO regime , 2000 .

[67]  A. Chovet,et al.  Influence of chemical corrosion on resistivity and 1/f noise of polysilicon gauges , 2000 .

[68]  D. Fleetwood,et al.  Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices , 1993 .

[69]  B. I. Shklovskii.  1/f noise in variable range hopping conduction , 2003 .

[70]  Viktor Krozer,et al.  Characterisation of reliability of compound semiconductor devices using electrical pulses , 1996 .

[71]  B K Jones,et al.  The excess noise in integrated circuit interconnects before and after electromigration damage , 1999 .

[72]  Bruno Neri,et al.  A detailed analysis of the pre-breakdown current fluctuations in thin oxide MOS capacitors , 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

[73]  C. Raynaud,et al.  Investigation of the reliability of Unibond and SIMOX N-MOSFETs using charge pumping and noise techniques , 1998 .

[74]  Daniel M. Fleetwood,et al.  Border traps: issues for MOS radiation response and long-term reliability , 1995 .

[75]  P. Hruska.  Thin film resistor technology and noise reliability indicators , 1997, 1997 21st International Conference on Microelectronics. Proceedings.

[76]  Fausto Fantini,et al.  A percolative approach to electromigration in metallic lines , 2001 .

[77]  Yisong Dai,et al.  A precision noise measurement and analysis method used to estimate reliability of semiconductor devices , 1997 .

[78]  B. Jones,et al.  1/f noise in ohmic silicon JFET channels , 1984 .

[79]  E. Simoen,et al.  Correlation between the low-frequency noise spectral density and the static device parameters of silicon-on-insulator MOSFETs , 1995 .

[80]  Jiansheng Xu,et al.  Analog circuit fault diagnosis based on noise measurement , 1999 .

[81]  X. Y. Chen,et al.  Effect of electrical and thermal stress on low-frequency noise characteristics of laser diodes , 2001, Microelectron. Reliab..

[82]  B. K. Jones,et al.  Noise and DC characteristics of power silicon diodes , 1997 .

[83]  D. Celi,et al.  DIMENSION SCALING OF 1/F NOISE IN THE BASE CURRENT OF QUASISELF-ALIGNED POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS , 1997 .

[84]  Xavier Hugon,et al.  Study of RTS noise and excess currents in lattice-mismatched InP/InGaAs/InP photodetector arrays , 1995 .

[85]  Dionyz Pogany,et al.  Origin of large‐amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation , 1996 .

[86]  Hermann Stoll,et al.  1/f noise as an early indicator of electromigration damage in thin metal films , 1996 .

[87]  M. A. Abdala,et al.  Correlation between trap characterisation by low frequency noise, mutual conductance dispersion, oscillations and DLTS in GaAs MESFETs , 1992 .

[88]  Yisong Dai.  An application of an artificial neural network to reliability screen classification from noise measurement , 1993 .

[89]  M. Schulz,et al.  Random telegraph signal: An atomic probe of the local current in field-effect transistors , 1998 .

[90]  D. Fleetwood.  'Border traps' in MOS devices , 1992 .

[91]  Derek Abbott,et al.  1/f, g–r and burst noise used as a screening threshold for reliability estimation of optoelectronic coupled devices , 2000 .

[92]  Zhuang Yiqi,et al.  noise as a prediction of long-term instability in integrated operational amplifiers , 1996 .

[93]  Yisong Dai.  The time–frequency analysis approach of electric noise based on the wavelet transform , 2000 .

[94]  Sheng-Lyang Jang,et al.  Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs , 1998 .

[95]  B K Jones,et al.  Correlations between 1/f noise and DC characteristics in bipolar transistors , 1985 .

[96]  P. M. Horn,et al.  Low-frequency fluctuations in solids: 1/f noise , 1981 .

[97]  Michael S. Shur,et al.  Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates , 2000 .

[98]  G. Zhigal'skii,et al.  1/f noise and nonlinear effects in thin metal films , 1997 .

[99]  Zeynep Celik-Butler.  1ƒ noise as an electromigration characterization tool for W-plug vias between TiN/AlCu/TiN metallizations , 1996 .

[100]  Y. Danto,et al.  Effects of RF life-test on LF electrical parameters of GaAs power MESFETs , 1999 .

[101]  C. Brabec,et al.  2.5% efficient organic plastic solar cells , 2001 .

[102]  Cor Claeys,et al.  Reliability aspects of the low-frequency noise behaviour of submicron CMOS technologies , 1999 .

[103]  B. K. Jones,et al.  Electrical Noise as a Measure of Quality and Reliability in Electronic Devices , 1993 .

[104]  M. J. Deen,et al.  Effect of mesa overgrowth on low-frequency noise in planar separate absorption, grading, charge, and multiplication avalanche photodiodes , 1999 .

[105]  M. M. Jevtić,et al.  Noise as a diagnostic and prediction tool in reliability physics , 1995 .

[106]  Bruno Neri,et al.  Electromigration in Al based stripes: Low frequency noise measurements and MTF tests , 1996 .

[107]  L.K.J. Vandamme,et al.  Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation , 1999 .

[108]  E. Cartier,et al.  Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides , 1998 .

[109]  Jian-Qiang Lu,et al.  Random Telegraph Noise in Advanced Self-Aligned Bipolar Transistors , 1996 .

[110]  I. Mrak,et al.  Thick-film resistor quality indicator based on noise index measurements , 1999 .