Silicon-on-insulator (SOI) structures for pressure sensors

Abstract The zone-melting-recrystallization method of preparating silicon-on-insulator (SOI) films, its variations, advantages, disadvantages, and its applicability for pressure sensors are considered in this article. The method of artificial epitaxy (graphoepitaxy) allows microstructures in SOI films to be controlled. The microconstruction and technology of IC pressure sensors based on SOI films are being developed. Four bridge circuits with p-type piezoresistors are placed on a square diaphragm with a central boss. Zero temperature shift and temperature sensitivity changes are investigated in the temperature range +20–+200 °C. The value of the zero temperature shift in the given temperature range is within 0.02 to 0.002% °C −1 . Besides the obvious advantages of sensors based on SOI films associated with their high-temperature properties, such structures provide greater flexibility in the microconstrution design of different sensors.

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