Design and function of GaN MESFET terahertz signal generator by finite difference method

The GaN based metal semiconductor field effect transistor (MESFET) devices have been designed by employing finite difference method in order to fit quite well for generation of terahertz signals. The equipotential and equi-electric field contours are broadly developed with variation of drain and gate voltages. The motion of Gunn domain with variation of voltage is constantly observed from source to drain in the channel area of MESFET. In fact, the domain is more clearly visible in the equi-electric field contours than that in the equipotential contours. The distribution of electron concentration (n) in the MESFET is also determined in the steady state mode by fitting right successive relaxation factor and electron relaxation time. The I-V curves of drain are tested by employing Gummel process in finite difference method. The MESFET device is designed in such way to obtain 26.5GHz output signal in the millimeter region by tailoring its physical parameters such as geometry of device, carrier concentration, mobilities etc.

[1]  C. B. Overton,et al.  Fowler–Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices , 2015 .

[2]  C. B. Overton,et al.  Growth and surface analysis of SiO2 on 4H-SiC for MOS devices , 2015 .

[3]  J. Federici,et al.  THz imaging and sensing for security applications—explosives, weapons and drugs , 2005 .

[4]  S. Asai,et al.  Two-dimensional numerical analysis of stability criteria of GaAs FET's , 1976, IEEE Transactions on Electron Devices.

[5]  S. S. Park,et al.  Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures , 2003 .

[6]  T. Isobe,et al.  Two-dimensional domain dynamics in a planar Schottky-gate Gunn-effect device , 1975, IEEE Transactions on Electron Devices.

[7]  H. W. Thim,et al.  Computer Study of Bulk GaAs Devices with Random One‐Dimensional Doping Fluctuations , 1968 .

[8]  M. Schilfgaarde,et al.  Bandstructure effect on high-field transport in GaN and GaAlN , 1997 .

[9]  H. Gummel,et al.  Large-signal analysis of a silicon Read diode oscillator , 1969 .

[10]  M. Mock.  Analysis and Simulation of Semiconductor Devices (Siegfried Selberherr) , 1985 .

[11]  Samir El-Ghazaly,et al.  A parallel implementation of a two-dimensional hydrodynamic model for microwave semiconductor device including inertia effects in momentum relaxation , 1997 .

[12]  P. Burke,et al.  High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy , 2014 .

[13]  Christopher M. Snowden,et al.  Introduction To Semiconductor Device Modelling , 1998 .

[14]  J. Lü,et al.  Terahertz generation and chaotic dynamics in GaN NDR diode , 2004 .

[15]  Ting-Wei Tang,et al.  Extension of the Scharfetter—Gummel algorithm to the energy balance equation , 1984 .

[16]  D. Pavlidis,et al.  Large-signal microwave performance of GaN-based NDR diode oscillators , 2000 .

[17]  Hui Yang,et al.  Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films , 2006 .

[18]  Subba Ramaiah Kodigala.  Verification of Fowler-Nordheim electron tunneling mechanism in Ni/SiO 2 /n-4H SiC and n + poly-Si/SiO 2 /n-4H SiC MOS devices by different models , 2016 .

[19]  Subba Ramaiah Kodigala.  Surface studies and photoluminescence of GaN epitaxial layers grown by MOCVD technique for applications of solar cells and light emitting devices , 2016 .