Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

[1]  W. E. Beadle,et al.  Switching properties of thin Nio films , 1964 .

[2]  Sangsul Lee,et al.  Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides , 2007 .

[3]  L. Samuelson,et al.  Case study of an InAs quantum dot memory: Optical storing and deletion of charge , 2001 .

[4]  S. O. Park,et al.  Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[5]  Dim-Lee Kwong,et al.  Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications , 2005 .

[6]  Pramod S. Patil,et al.  Preparation and characterization of spray pyrolyzed nickel oxide (NiO) thin films , 2002 .

[7]  S. Long,et al.  Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide , 2007 .

[8]  S. Q. Liu,et al.  Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .

[9]  J. Simmons,et al.  New conduction and reversible memory phenomena in thin insulating films , 1967, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[10]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface , 2004, cond-mat/0409657.

[11]  T. Jackson,et al.  Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry , 2002 .

[12]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[13]  C. Yoshida,et al.  High Speed Resistive Switching in Pt/TiO2/TiN Resistor for Multiple-Valued Memory Device , 2006 .

[14]  L. V. Gregor.  Electrical conductivity of polydivinylbenzene films , 1968 .

[15]  H. Hwang,et al.  HPHA effect on reversible resistive switching of Pt/Nb-doped SrTiO3 Schottky junction for nonvolatile memory application , 2007 .

[16]  Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium–Yttrium Mixed Oxide , 2011 .

[17]  C. Gerber,et al.  Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .

[18]  Seiichi Miyazaki,et al.  Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics , 2001 .

[19]  Byung Joon Choi,et al.  Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .