Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

4H-SiC MOSFETs integrated with a current sensor have been fabricated for the first time. The MOSFET shows superior characteristics with a specific on-resistance of 3.7 mΩcm2 and a blocking voltage of 1.4 kV. The deviation of the current ratio (Imain/Isense) stays within 10% in the temperature range between 25°C and 175°C, which is desirable for the current sensor of high power devices. Furthermore, the main current shut-off operation at an over-current detected using the current sensor has been demonstrated successfully.

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