论文信息 - Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs - 字舞流文

Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs

K. B. Noh | M. Kim | S. Chew | A. De Keersgieter | N. Horiguchi | A. Thean | M. Togo | T. Chiarella | D. Brunco | G. Hellings | W. Vandervorst | B. Colombeau | Y. Sasaki | G. Boccardi | L. Godet | T. Rockwell | J. Lee | G. Zschaetszch | P. Martin