P-type PtSi Schottky-diode barrier height determined from I–V measurement

Abstract We have shown that the method of analyzing the fundamental barrier height (flat-band barrier height at zero field) for n -type platinum-silicide Schottky barrier diodes can be extended to p -type Schottky barrier diodes. A mean flat-band barrier height of 0.272 ± 0.005 eV is obtained for p -type Schottky barrier diodes by relating the measured barrier heights and their corresponding ideality factors from I - V measurements. Nine different combinations of processing conditions were used in the fabrication of these devices so that the effects of different processes on the device characteristics could be evaluated.