Method and system for determining alignment precision matching between lithography machines

The invention discloses a method and a system for determining alignment precision matching between lithography machines, which aim to solve the problem that the provided alignment precision measuring equipment cannot analyze and determine alignment precision between the lithography machines. In the method, when a first lithography machine performs first-layer exposure on a silicon wafer, a second lithography machine is moved according to coordinate difference between datum points in each pair of measurement regions on the silicon wafer which is subjected to the first-layer exposure; and the moved second lithography machine performs second-layer exposure on the silicon wafer, and the alignment precision quantity between the first lithography machine and the second lithography machine is determined according to the coordinate difference between each pair of measurement points in each pair of measurement regions on the silicon wafer which is subjected to the second-layer exposure. In the embodiment of the invention, the alignment precision quantity between the lithography machines is determined by acquiring the coordinates of the measurement points; and if the measurement points are several, the alignment precision quantity between the lithography machines can be determined accurately by accurately determining the coordinate difference between the measurement points.