论文信息 - Subnanosecond-pulse generator with variable pulsewidth using avalanche transistors

Subnanosecond-pulse generator with variable pulsewidth using avalanche transistors

The letter describes a pulse generator with epitaxial silicon planar transistors working in the avalanche-breakdown mode. The risetime is 150 ps and the fall time 200 ps. The pulse-width can be varied continuously between 0.3 and 120 ns, without changing the maximum amplitude of about 15 V. Simple rules for the exact design of the circuitry are given.

H.-M. Rein | M. Zahn

[1] H. Rein,et al. Der einfluss des basisbahnwiderstandes und der ladungsträgermultiplikation auf das ausgangskennlinienfeld von planartransistoren , 1972 .