论文信息 - Humidity sensitive field effect transistors

Humidity sensitive field effect transistors

Abstract A new device, named humidity sensitive field effect transistors (HUSFETs), for integrated humidity sensors has been fabricated using conventional silicon microtechnology. The insulator structure of this HUSFETs is TiO2/Si3N4SiO2 and the water molecular permeable electrode is thin porous gold. The fabricated devices showed typical enhancement mode characteristics and the threshold voltage was about 2.7 V in 60% RH. It can be seen that the threshold voltages of HUSFET decreased from 3.0 to 2.4 V and the drain current increased from 208 to 464 μA according to increasing relative humidities from 30 to 90%. The sensitivity of HUSFET is 3.2 μA/RH, when the drain and gate voltages are constant.

S. P. Lee | Kun-Joo Park | Sung Pil Lee | K. Park

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