Influence of the FIB parameters on the etching of planar nanosized multigraphene/SiC field emitters

The possibility of fabrication of planar field emission nanostructures based on multigrafene films on semiinsulating silicon carbide using focused ion beam (FIB) technology is considered in this paper. The effect of FIB-parameters on the etching of the structure was determined using a scanning probe microscope. Conductive probes were used for local studies of electrical properties of nanoscale structures. It was found that etching of planar field emission nanostructures at a current of 1 pA did not lead to a change in the depth of the treated area. An increase in current up to 10 pA was sufficient to initiate the etching process of a multigraphene film on the surface of silicon carbide.