论文信息 - InAs-based heterojunction bipolar transistors

InAs-based heterojunction bipolar transistors

The first InAlAs-InAs heterojunction bipolar transistors are reported. A current gain of 100 at room temperature is measured. The base-collector junction is an InAs p-n homojunction, which is optimised to have low reverse leakage at room temperature. The emitter is pseudomorphic AlInAs, linearly graded to increase the barrier which inhibits hole injection into the emitter.

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