6 – Hydrodynamics and Mass Transport

Publisher Summary This chapter deals with the hydrodynamic aspects of organometallic vapor-phase epitaxy (OMVPE). The flow dynamics in typical reactors are so complex that an intuitive “feel” for the process eludes the typical crystal grower.. In fact, much of the understanding comes from complex computer calculations that take years to develop and consume considerable time on largest supercomputers. Such calculations border on the realm of dedicated hydrodynamic researchers.. This chapter introduces the fundamental concepts on which the calculations are based. Other approaches discussed in the chapter contribute to the goal of developing an improved working understanding of the OMVPE process applicable to everyday laboratory problems. This chapter also discusses the growth rate that is assumed to be limited by mass transport and it is applied over a certain temperature range where growth rate is observed to be nearly temperature-independent.

[1]  R. Tsunoda,et al.  Flow patterns in various vertical reactors and movpe growth , 1986 .

[2]  H. Peek,et al.  A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor , 1970 .

[3]  N. Mason,et al.  A new inlet area design for horizontal MOVPE reactors , 1989 .

[4]  G. Wahl.  Hydrodynamic description of CVD processes , 1977 .

[5]  A. Thompson,et al.  The scaling of CVD rotating disk reactors to large sizes and comparison with theory , 1996 .

[6]  S. C. Palmateer,et al.  Flow visualization studies for optimization of OMVPE reactor design , 1986 .

[7]  Franz Rosenberger,et al.  On the 2D modelling of horizontal CVD reactors and its limitations , 1988 .

[8]  L. J. Giling,et al.  Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference Holography , 1982 .

[9]  William G. Breiland,et al.  Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor , 1991 .

[10]  M. Leys,et al.  Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactor , 1984 .

[11]  Klavs F. Jensen,et al.  Complex flow phenomena in MOCVD reactors: I. Horizontal reactors , 1986 .

[12]  Toshiro Hayashi,et al.  Numerical Analysis of the Transport Phenomena in MOCVD Process , 1985 .

[13]  Donald R. McKenna,et al.  Limitations to the omvpe growth of Hg compounds due to hydrodynamic effects , 1988 .

[14]  N. Mason,et al.  Influence of gas mixing and expansion in horizontal MOVPE reactors , 1991 .

[15]  S. Uekusa,et al.  Hydrodynamic description of epitaxial film growth in a horizontal reactor , 1997 .

[16]  Donald R. McKenna,et al.  MOCVD in inverted stagnation point flow: I. Deposition of GaAs from TMAs and TMGa , 1986 .

[17]  M. Leys,et al.  On the factors impairing the compositional transition abruptness in heterojunctions grown by vapour-phase epitaxy , 1987 .

[18]  J. V. D. Ven,et al.  Gas phase depletion and flow dynamics in horizontal MOCVD reactors , 1986 .