The MSET as an IC building block

Owing to its multigate structure, the Multistate Electrostatically Formed Nanowire Transistor (MSET) enables the implementation of various fundamental analog and digital functions with fewer components compared, e.g., with CMOS technology. Due to its low off-current and overall low energy dissipation, the MSET can be regarded ideal for low-power IoT applications that operate at moderate frequencies. We overview in this brief the MSET and present its framework in the context of the digital gates commonly employed in integrated circuits. In particular, an analysis of an MSET-based NAND gate is outlined, and a general overview of its performance is provided.