Method of fabricating the landing plug contact in the semiconductor device

A method for forming a landing plug contact in a semiconductor device is provided to prevent a self-alignment contact fail for forming the landing plug contact by forming a conductive layer for the landing plug contact prior to an interlayer dielectric and then creating a separated landing plug contact. A gate stack and a gate spacer layer(132) are formed on a semiconductor substrate(100). A conductive layer for a landing plug contact is formed to gap-fill a space between the gate spacer layers. A hard mask layer pattern is formed to expose a part of the conductive layer for a landing plug contact. The exposed conductive layer for a landing plug contact is removed by an etching process using the hard mask layer pattern. A dielectric is formed on the entire surface so that the part where the conductive layer for a landing plug contact is removed is gap-filled. Upper portions of the dielectric and the conductive layer for a landing plug contact are planarized to form a separated landing plug contact(141).