论文信息 - Design and simulation of active spiral inductors for RF integrated circuits

Design and simulation of active spiral inductors for RF integrated circuits

A numerical simulation scheme is presented for the design of miniaturized inductors and transformers compatible with a silicon-based standard bipolar process for RF integrated circuits. A combination of FDTD method and SPICE simulator has been used for the feasibility study of high Q integrated active coils.

A. Monorchio | B. Neri | G. D'Angelo | A. Granchi

[1] A. Taflove,et al. The use of SPICE lumped circuits as sub-grid models for FDTD analysis , 1994, IEEE Microwave and Guided Wave Letters.

[2] Asad A. Abidi,et al. Low-power radio-frequency ICs for portable communications , 1995, Proc. IEEE.

[3] Mattan Kamon. Fast parasitic extraction and simulation of three-dimensional interconnect via quasistatic analysis , 1998 .

[4] Cheon Soo Kim,et al. The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology , 1998 .

[5] D. Kossives,et al. Investigation of current crowding effect on spiral inductors , 1997, 1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest.

[6] J.N. Burghartz,et al. Multilevel-spiral inductors using VLSI interconnect technology , 1996, IEEE Electron Device Letters.