Synthesis of an open-framework allotrope of silicon.

Silicon is ubiquitous in contemporary technology. The most stable form of silicon at ambient conditions takes on the structure of diamond (cF8, d-Si) and is an indirect bandgap semiconductor, which prevents it from being considered as a next-generation platform for semiconductor technologies. Here, we report the formation of a new orthorhombic allotrope of silicon, Si24, using a novel two-step synthesis methodology. First, a Na4Si24 precursor was synthesized at high pressure; second, sodium was removed from the precursor by a thermal 'degassing' process. The Cmcm structure of Si24, which has 24 Si atoms per unit cell (oC24), contains open channels along the crystallographic a-axis that are formed from six- and eight-membered sp(3) silicon rings. This new allotrope possesses a quasidirect bandgap near 1.3 eV. Our combined experimental/theoretical study expands the known allotropy for element fourteen and the unique high-pressure precursor synthesis methodology demonstrates the potential for new materials with desirable properties.

[1]  González,et al.  Electrical properties of semimetallic silicon III and semiconductive silicon IV at ambient pressure. , 1987, Physical review letters.

[2]  M. Kanatzidis,et al.  Synthesis and structural characterization of Na(x)Si136 (0 < x ≤ 24) single crystals and low-temperature transport of polycrystalline specimens. , 2012, Inorganic chemistry.

[3]  E. Y. Tonkov,et al.  Phase Transformations of Elements Under High Pressure , 2004 .

[4]  T. Strobel,et al.  Na-Si Clathrates Are High-Pressure Phases: A Melt-Based Route to Control Stoichiometry and Properties , 2013 .

[5]  M. Pouchard,et al.  High Pressure Behavior of Silicon Clathrates: A New Class of Low Compressibility Materials , 1999 .

[6]  K. Ho,et al.  sp3-hybridized framework structure of group-14 elements discovered by genetic algorithm , 2014 .

[7]  M. Zwijnenburg,et al.  An extensive theoretical survey of low-density allotropy in silicon. , 2010, Physical chemistry chemical physics : PCCP.

[8]  Su-Huai Wei,et al.  Towards direct-gap silicon phases by the inverse band structure design approach. , 2013, Physical review letters.

[9]  R. Grigorovici,et al.  Optical Properties and Electronic Structure of Amorphous Germanium , 1966, 1966.

[10]  David Olson,et al.  Atlas of Zeolite Framework Types , 2007 .

[11]  B. Malone,et al.  Prediction of a metastable phase of silicon in the Ibam structure , 2012 .

[12]  G. Stucky,et al.  Eu4Ga8Ge16: A New Four-Coordinate Clathrate Network , 2001 .

[13]  G. Shao,et al.  An efficient room-temperature silicon-based light-emitting diode , 2001, Nature.

[14]  J. Kasper,et al.  Clathrate Structure of Silicon Na8Si46 and NaxSi136 (x < 11) , 1965, Science.

[15]  H. Bethe,et al.  A Relativistic equation for bound state problems , 1951 .

[16]  O. Sankey,et al.  THEORETICAL STUDY OF THE VIBRATIONAL MODES AND THEIR PRESSURE DEPENDENCE IN THE PURE CLATHRATE-II SILICON FRAMEWORK , 1999 .

[17]  F. Illas,et al.  Apparent scarcity of low-density polymorphs of inorganic solids. , 2010, Physical review letters.

[18]  M. I. Alonso,et al.  Optical functions and electronic structure of CuInSe 2 , CuGaSe 2 , CuInS 2 , and CuGaS 2 , 2001 .

[19]  P. Solomon,et al.  It’s Time to Reinvent the Transistor! , 2010, Science.

[20]  Stefan Goedecker,et al.  Low-energy silicon allotropes with strong absorption in the visible for photovoltaic applications , 2012, 1203.5669.

[21]  J. Conesa Computer modeling of allo-Si and allo-Ge polymorphs , 2002 .

[22]  Y. Prots,et al.  High-pressure synthesis of the electron-excess compound CaSi6 , 2007 .

[23]  Yuri Grin,et al.  A Guest‐Free Germanium Clathrate. , 2006 .

[24]  Derek L. Patton,et al.  Low-density framework form of crystalline silicon with a wide optical band gap , 2000 .

[25]  H. Mao,et al.  High optical quality multicarat single crystal diamond produced by chemical vapor deposition , 2012 .

[26]  B. Malone,et al.  Ab initiosurvey of the electronic structure of tetrahedrally bonded phases of silicon , 2008 .

[27]  D. Connétable Structural and electronic properties of p-doped silicon clathrates , 2007 .

[28]  Y. Prots,et al.  High-pressure Synthesis of Strontium Hexasilicide , 2006 .

[29]  R. H. Wentorf,et al.  Two New Forms of Silicon , 1963, Science.

[30]  M. Fujita Nanocavity brightens silicon , 2013, Nature Photonics.

[31]  H. Queisser,et al.  Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells , 1961 .

[32]  Y. Prots,et al.  Breaking the Zintl rule : High-pressure synthesis of binary EuSi6 and its ternary derivative EuSi6-xGax (0 ≤ x ≤ 0.6) , 2006 .

[33]  P. Cox,et al.  The Hydrothermal Synthesis of Zeolites: History and Development from the Earliest Days to the Present Time , 2003 .

[34]  Stefan Albrecht Lucia Reining Rodolfo Del Sole Giovanni Onida Ab Initio Calculation of Excitonic Effects in the Optical Spectra of Semiconductors , 1998 .