论文信息 - Trap states in AlGaN channel high-electron-mobility transistors

Trap states in AlGaN channel high-electron-mobility transistors

Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 1013 cm−2eV−1 at the energy of 0.33 eV to 4.35 × 1011 cm−2eV−1 at 0.40 eV. Compared with GaN channel HEMTs, the trap states in the AlGaN channel HEMTs have deeper energy levels. The trap with deeper energy levels in the AlGaN channel HEMTs is another reason for the reduction of the reverse gate leakage current besides the higher Schottky barrier height.

[1] A. Vescan,et al. Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis , 2008 .

[2] Lin-An Yang,et al. Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition , 2010 .

[3] Dongmin Liu,et al. Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing , 2005 .

[4] Y. Aoyagi,et al. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors , 2008 .

[5] James S. Speck,et al. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit , 2008 .

[6] Y. Hao,et al. Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors , 2013 .

[7] J. B. Webb,et al. Properties of carbon-doped GaN , 2001 .

[8] T. Hashizume,et al. Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition , 2010 .

[9] C. Bolognesi,et al. Ozone passivation of slow transient current collapse in AlGaN∕GaN field-effect transistors: The role of threading dislocations and the passivation mechanism , 2006 .