A new monolithic composite- cavity (GaAl)As laser
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M. Wada | Hirokazu Shimizu | Gota Kano | K. Hamada | Masahiro Kume | Kunio Itoh | I. Teramoto | T. Shibutani | N. Yoshikawa
[1] K. Iga,et al. Chemically etched-mirror GaInAsP/InP lasers - Review , 1982, IEEE Journal of Quantum Electronics.
[2] T. Bridges,et al. 1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers , 1984 .
[3] G. Kano,et al. A new chemical etching technique for formation of cavity facets of (GaAl)As lasers , 1985, IEEE Journal of Quantum Electronics.
[4] Osamu Wada,et al. AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiode , 1982 .
[5] Shigehisa Arai,et al. GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide , 1981 .
[6] Kenichi Iga,et al. GaInAsP/InP laser with monolithically integrated monitoring detector , 1980 .
[7] Larry A. Coldren,et al. Single‐mode operation of coupled‐cavity GaInAsP/InP semiconductor lasers , 1983 .
[8] L. Coldren,et al. Crystallographic facets chemically etched in GaInAsP/InP for integrated optics , 1981 .
[9] K. Aiki,et al. Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement , 1976 .
[10] M. Wada,et al. A 0.2 W CW laser with buried twin-ridge substrate structure , 1985, IEEE Journal of Quantum Electronics.