论文信息 - 1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination - 字舞流文

1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination

Y. Hao | Jincheng Zhang | Jing Ning | Shenglei Zhao | Xiaoling Duan | Jiabo Chen | Yachao Zhang | Zhaoke Bian