Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes
暂无分享,去创建一个
X. Li | J.C. Campbell | Ning Li | X.G. Zheng | L.A. Coldren | S. Wang | Ning Duan | Chad Wang
[1] T. Baird,et al. High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes , 1993, IEEE Photonics Technology Letters.
[2] X. Li,et al. Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region , 2001, IEEE Photonics Technology Letters.
[3] Toshitaka Torikai,et al. 10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure , 2000 .
[4] Monte Carlo simulations of the bandwidth of InAlAs avalanche photodiodes , 2003 .
[5] R. B. Emmons,et al. Avalanche photodiode frequency response , 1967 .
[6] Bahaa E. A. Saleh,et al. Time and frequency response of avalanche photodiodes with arbitrary structure , 1992 .
[7] Long-wavelength In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As large-area avalanche photodiodes and arrays , 2004, IEEE Journal of Quantum Electronics.
[8] T. Mikawa,et al. Excess noise design of InP/GaInAsP/GaInAs avalanche photodiodes , 1986 .
[9] A. Holmes,et al. InGaAs/InAlAs avalanche photodiode with undepleted absorber , 2003 .
[10] Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As , 2003 .
[11] J. Campbell,et al. Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode , 2002 .
[12] J. Campbell,et al. Calculation of Gain and Noise With Dead Space for GaAs and Al Ga As Avalanche Photodiode , 2002 .
[13] Joe C. Campbell,et al. High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy , 1988 .
[14] K. Makita,et al. Gain-bandwidth product analysis of InAlGaAs-InAlAs superlattice avalanche photodiodes , 1996, IEEE Photonics Technology Letters.
[15] Joe C. Campbell,et al. High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product , 1997 .
[16] J.C. Campbell,et al. Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz , 1999, IEEE Photonics Technology Letters.
[17] J.C. Campbell,et al. Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz , 2001, IEEE Photonics Technology Letters.
[18] S. Demiguel,et al. Very high-responsivity evanescently coupled photodiodes integrating a short planar multimode waveguide for high-speed applications , 2003, IEEE Photonics Technology Letters.
[19] V. D. Mattera,et al. High Frequency Performance Of Planar InGaAs/InP Avalanche Photodiodes , 1989, Other Conferences.
[20] K. Kato. Ultrawide-band/high-frequency photodetectors , 1999 .
[21] S. Forrest,et al. A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode , 2002, IEEE Photonics Technology Letters.