Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche photodiodes is critical to achieve low excess noise and high gain bandwidth product.

[1]  T. Baird,et al.  High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes , 1993, IEEE Photonics Technology Letters.

[2]  X. Li,et al.  Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region , 2001, IEEE Photonics Technology Letters.

[3]  Toshitaka Torikai,et al.  10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure , 2000 .

[4]  Monte Carlo simulations of the bandwidth of InAlAs avalanche photodiodes , 2003 .

[5]  R. B. Emmons,et al.  Avalanche photodiode frequency response , 1967 .

[6]  Bahaa E. A. Saleh,et al.  Time and frequency response of avalanche photodiodes with arbitrary structure , 1992 .

[7]  Long-wavelength In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As large-area avalanche photodiodes and arrays , 2004, IEEE Journal of Quantum Electronics.

[8]  T. Mikawa,et al.  Excess noise design of InP/GaInAsP/GaInAs avalanche photodiodes , 1986 .

[9]  A. Holmes,et al.  InGaAs/InAlAs avalanche photodiode with undepleted absorber , 2003 .

[10]  Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As , 2003 .

[11]  J. Campbell,et al.  Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode , 2002 .

[12]  J. Campbell,et al.  Calculation of Gain and Noise With Dead Space for GaAs and Al Ga As Avalanche Photodiode , 2002 .

[13]  Joe C. Campbell,et al.  High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy , 1988 .

[14]  K. Makita,et al.  Gain-bandwidth product analysis of InAlGaAs-InAlAs superlattice avalanche photodiodes , 1996, IEEE Photonics Technology Letters.

[15]  Joe C. Campbell,et al.  High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product , 1997 .

[16]  J.C. Campbell,et al.  Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz , 1999, IEEE Photonics Technology Letters.

[17]  J.C. Campbell,et al.  Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz , 2001, IEEE Photonics Technology Letters.

[18]  S. Demiguel,et al.  Very high-responsivity evanescently coupled photodiodes integrating a short planar multimode waveguide for high-speed applications , 2003, IEEE Photonics Technology Letters.

[19]  V. D. Mattera,et al.  High Frequency Performance Of Planar InGaAs/InP Avalanche Photodiodes , 1989, Other Conferences.

[20]  K. Kato.  Ultrawide-band/high-frequency photodetectors , 1999 .

[21]  S. Forrest,et al.  A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode , 2002, IEEE Photonics Technology Letters.