Photodetectors for fiber transmission systems

A review of the basic features of photodetectors including p-i-n and avalanche types is presented. At the present time silicon devices for use in the 0.8-0.9-µm region have been successfully developed and are readily available. Present efforts are aimed at developing devices for use in the 1.3-1.6-µm region where improved fiber performance is possible.

[1]  L. M. Rucker,et al.  Theory of carrier multiplication and noise in avalanche devices—Part II: Two-carrier processes , 1979, IEEE Transactions on Electron Devices.

[2]  Y. Takanashi,et al.  InGaAsP/InP Avalanche Photodiode , 1978 .

[3]  R. Yeats,et al.  Vapor‐phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode application , 1979 .

[4]  Stephen R. Forrest,et al.  Evidence for tunneling in reverse‐biased III‐V photodetector diodes , 1980 .

[5]  T. P. Lee,et al.  Dual-channel 1.5 Mb/s lightwave receiver employing an InGaAsP wavelength-demultiplexing detector , 1979 .

[6]  C. Burrus,et al.  InGaAsP p-i-n photodiodes with low dark current and small capacitance , 1979 .

[7]  F. Capasso,et al.  Low leakage current and saturated reverse characteristic in broad-area InGaAsP diodes , 1980 .

[8]  K. Ogawa,et al.  Small area ingaas/inp p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 mb/s and 45 mb/s lightwave receivers at 1.31 μm wavelength , 1980 .

[9]  T. Ito,et al.  Half-duplex optical transmission link using an LED source-detector scheme. , 1978, Optics letters.

[10]  Y. Matsushima,et al.  Zn‐diffused In0.53Ga0.47As/InP avalanche photodetector , 1979 .

[11]  N. Susa,et al.  Planar photodiodes made from vapour-phase epitaxial InxGa1-xAs , 1979 .

[12]  R. Yeats,et al.  Leakage current in InGaAsP avalanche photodiodes , 1980 .

[13]  J. J. Hsieh,et al.  GaInAsP/InP Avalanche Photodiodes* , 1978, Integrated and Guided Wave Optics.

[14]  Katsuhiko Nishida,et al.  InGaAsP heterostructure avalanche photodiodes with high avalanche gain , 1979 .

[15]  R. Yeats,et al.  Long‐wavelength InGaAsP avalanche photodiodes , 1979 .

[16]  K. Ogawa,et al.  GaAs f.e.t. transimpedance front-end design for a wideband optical receiver , 1979 .

[17]  P. Petroff,et al.  Investigation of microplasmas in InP avalanche photodiodes , 1980, 1979 International Electron Devices Meeting.

[18]  C. A. Burrus,et al.  High avalanche gain in small-area InP photodiodes , 1979 .

[19]  H. Melchior,et al.  Photodetectors for optical communication systems , 1970 .

[20]  F. Capasso,et al.  Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm , 1980 .

[21]  J. Conradi,et al.  The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental , 1972 .

[22]  R. B. Emmons,et al.  Avalanche‐Photodiode Frequency Response , 1967 .

[23]  H. Ando,et al.  Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode , 1980, IEEE Electron Device Letters.

[24]  R. Mcintyre.  Multiplication noise in uniform avalanche diodes , 1966 .

[25]  A. Choudhury,et al.  Ionization coefficients measured in abrupt InP junctions , 1980 .

[26]  H. Melchior,et al.  Signal and noise response of high speed germanium avalanche photodiodes , 1966 .

[27]  Thomas P. Pearsall,et al.  Impact ionization rates for electrons and holes in GaAs1−xSbx alloys , 1976 .

[28]  Takao Kaneda,et al.  Avalanche buildup time of silicon reach‐through photodiodes , 1976 .

[29]  R. Mcintyre.  The distribution of gains in uniformly multiplying avalanche photodiodes: Theory , 1972 .

[30]  Hans Melchior.  Detectors for lightwave communication , 1977 .

[31]  Joseph M. Ballantyne,et al.  An integrated photoconductive detector and waveguide structure , 1980 .

[32]  A. D. Lucas.  Epitaxial silicon avalanche photodiode , 1974 .

[33]  I. Garrett,et al.  Receivers for optical communications: A comparison of avalanche photodiodes with PIN-FET hybrids , 1978 .

[34]  H. Ando,et al.  Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µm , 1978, IEEE Journal of Quantum Electronics.

[35]  H. Ando,et al.  Vapor-Phase Epitaxial Growth of InGaAs on (100) InP Substrate , 1980 .

[36]  A. Dentai,et al.  p-n-p-n optical detectors and light-emitting diodes , 1978, IEEE Journal of Quantum Electronics.

[37]  C. A. Burrus,et al.  Dark current and breakdown characteristics of dislocation‐free InP photodiodes , 1980 .

[38]  H. Law,et al.  Ion-implanted InGaAsP avalanche photodiode , 1978 .

[39]  T. Pearsall,et al.  Impact ionization coefficients for electrons and holes in In0.14Ga0.86As , 1975 .

[40]  K. Nakano,et al.  III-V alloy heterostructure high speed avalanche photodiodes , 1979 .

[41]  M. C. Brain.  Responsivity and noise characterisation of ge avalanche photodiode throughout wavelength range 1.1–1.7 μm , 1979 .