论文信息 - Investigation of persistent photoconductivity in a Ge-doped ZnSe epilayer

Investigation of persistent photoconductivity in a Ge-doped ZnSe epilayer

A persistent photoconductivity (PPC) measurement was made on Ge-doped ZnSe using contact electrodes. It is shown that Ge in ZnSe forms deep levels responsible for the observed PPC effect at a quenching temperature of 210 K. The photogenerated carriers move freely in the ZnSe:Ge epilayer but are confined in the region exposed to light, indicating that it is possible to write an erasable metallic pattern on the epilayer.

L. Y. Chen | N. Dai | M. Tamargo | L. Zhang | G. Hu

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