Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
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Robert F. Davis | Darren B. Thomson | Pradeep Rajagopal | Kevin J. Linthicum | Scott A. Smith | R. Davis | K. Linthicum | T. Zheleva | P. Rajagopal | D. Thomson | Tsvetanka Zheleva
[1] Robert F. Davis,et al. Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures , 1999 .
[2] S. Denbaars,et al. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD , 1998 .
[3] Robert F. Davis,et al. Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy , 1998 .
[4] J. Schetzina,et al. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence , 1998 .
[5] Robert F. Davis,et al. High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma , 1997 .
[6] Gerhard Fasol. Longer Life for the Blue Laser , 1997, Science.
[7] Robert F. Davis,et al. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy , 1997 .
[8] Robert F. Davis,et al. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures , 1997 .
[9] Akira Sakai,et al. Defect structure in selectively grown GaN films with low threading dislocation density , 1997 .
[10] Akira Sakai,et al. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy , 1997 .
[11] R. Davis,et al. Growth of GaN and Al0.2Ga0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy , 1997 .
[12] Shuji Nakamura,et al. The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .
[13] Thomas F. Kuech,et al. High temperature adduct formation of trimethylgallium and ammonia , 1996 .
[14] S. Hiyamizu,et al. MBE growth of GaAs/AlAs double-barrier structures on GaAs channeled substrates , 1991 .
[15] K. Vahala,et al. Compositional modulation in AlxGa1−xAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a nonplanar substrate , 1989 .
[16] E. Kapon,et al. Patterned quantum well semiconductor laser arrays , 1989 .
[17] Eli Kapon,et al. Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates , 1987 .
[18] A. Cho,et al. Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition , 1977 .