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Si/SiGe electron resonant tunneling diodes

Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance ...

Douglas J. Paul | Karl-Fredrik Berggren | S. Mantl | P. See | Igor Zozoulenko | B. Holländer | S. Mantl | I. Zozoulenko | P. See | D. Paul | K. Berggren | Bernhard Holländer | B. Kabius | B. Kabius

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