A Low Power, High Gain Semi-Floating Gate Amplifier for Resonating Sensors Front-End

In this work, we propose a low power and high gain electronic Front-end for resonating sensors based on semi-floating-gate inverting amplifiers (SFGA). Low power and high gain are achieved using a novel biasing technique of the floating gates in SFGA. The proposed amplifier has been simulated in AMS-350nm CMOS technology, characterized by very low leakages. Gain, output swing and bandwidth can be controlled by applying a proper biasing voltage. Simulation results show a trade-off between gain and bandwidth. However, the best performance recorded are: gain of 54dB (505 V/V) and bandwidth of 1.63GHz. A transient analysis with a sinusoidal input has been performed in order to verify the working principle of the SFGA. The implemented circuit provides a static power consumption of 69µW with a power supply of 3.3V. At the end of this work, the SFGA has been connected as a sensor front-end to read-out the response of a resonating sensor, which has been modelled with a Butterworth Van Dike model of a real device (MURATA MA40S4R).

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