Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
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Jin Wei | Baoshun Zhang | Yong Cai | Kevin J. Chen | Gaofei Tang | Jiacheng Lei | Mengyuan Hua | Kai Fu | Baoshun Zhang | Jin Wei | K. Fu | Jiacheng Lei | M. Hua | Yong Cai | Gaofei Tang | Zhaofu Zhang | Zhaofu Zhang | K. J. Chen
[1] Baoshun Zhang,et al. Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs , 2015, IEEE Transactions on Electron Devices.