Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements
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Kiyoshi Asakawa | Hitoshi Nakamura | Shigeru Kohmoto | Satoshi Nishikawa | K. Asakawa | Kyozo Kanamoto | S. Nishikawa | S. Kohmoto | K. Kanamoto | H. Nakamura
[1] Winston V. Schoenfeld,et al. Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules , 2000 .
[2] O. Wada,et al. Dephasing time characterization of InAs quantum dots by four-wave mixing measurement , 2002 .
[3] Tomonori Ishikawa,et al. Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography , 1999 .
[4] K. West,et al. Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature , 2000 .
[5] S. Denbaars,et al. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .
[6] Haruhiko Kuwatsuka,et al. Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers , 2000 .
[7] M. Sugawara. Self-assembled InGaAs/GaAs, quantum dots , 1999 .
[8] D. Bimberg,et al. Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.
[9] D. Miller,et al. Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures , 1982 .
[10] Hiroshi Okamoto,et al. Large optical nonlinearity and fast response time in low-temperature grown GaAs/AlAs multiple quantum wells , 2000 .
[11] Jean-Michel Gérard,et al. THIRD-HARMONIC GENERATION IN INAS/GAAS SELF-ASSEMBLED QUANTUM DOTS , 1999 .
[12] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .
[13] Martin D. Dawson,et al. Room‐temperature optical nonlinearities in strained (InAs)2(GaAs)5 superlattice quantum wells , 1991 .