论文信息 - Low temperature deposition of SiO2 and PSG using SiH4, N2O and phosphorous vapour for damage-free passivation of InP-based PIN diodes by plasma- and photo-assisted LPCVD - 字舞流文

Low temperature deposition of SiO2 and PSG using SiH4, N2O and phosphorous vapour for damage-free passivation of InP-based PIN diodes by plasma- and photo-assisted LPCVD

H. Hartnagel | N. Dasgupta | R. Riemenschneider | H. Kräutle | R. Schütz

[1] J. Osenbach,et al. Electrical, physical, and chemical characteristics of plasma‐assisted chemical‐vapor deposited semi‐insulating a‐SiN:H and their use as a resistive field shield for high voltage integrated circuits , 1990 .

[2] G. Larrabee,et al. Deposition and Reflow of Phosphosilicate Glass , 1985 .

[3] T. T. Sheng,et al. Plasma oxidation of aluminum film on GaAs—A study by Auger spectroscopy and transmission electron microscopy , 1977 .