Structure of dram device and manufaturing method thereof

PURPOSE: A structure of A DRAM device and a manufacturing method thereof are provided to form a word line and a bit line which are metal materials on a memory cell by forming a memory cell of a DRAM below the word line and the bit line. CONSTITUTION: A plurality of word lines are arranged in a single direction in parallel. A plurality of bit lines are orthogonal to the word line and is arranged in parallel. A plurality of memory cells comprises a capacitor(140) which is electrically connected to a transistor(130) and a source terminal of the transistor. A gate terminal of the transistor is electrically connected through a word line contact point(110) to the word line. A drain of the transistor is electrically connected through a bit line contact point(120) to the bit line.