Operation ofaWorkFunction Type SOITemperature Sensor up to250OC

Bulk-Si ICscannot operate over150°C,duetothe reverse bias leakage current ofthep-njunction inMOS FETs or diodecomponents. In thispaper,we investigated aworkfunction typetemperature sensor on aSOIsubstrate, whichgenerates voltage output bythe workfunction difference andissuperior todiode-type temperature sensors athightemperature. ThisSOI temperature sensor isoperated upto250°C,andthe consumption current isoneorder ofmagnitude lower than that ofabulk-Si temperature sensor.