Real-time aging monitoring for power MOSFETs using threshold voltage

Power MOSFET is one of the most rapidly aging components in power electronic converters, and some study of the health monitoring of power MOSFETs is made in this paper. This paper proposes a threshold voltage-based real-time aging monitoring method for power MOSFETs in Buck converters. Firstly, the origins of degradation in power MOSFETs are analyzed, and the junction temperature is indicated to be the most promising failure precursor for the health monitoring. Then, threshold voltage is chosen as the thermo-sensitive electrical parameter for junction temperature estimation. For Buck converters, a real-time threshold voltage monitoring method is proposed. Taking advantage of the particular structure of Buck converters, the proposed method only needs to capture the gate-ground voltage, which is costless and easy to realize. Finally, the effectiveness of the proposed method is verified by simulation and experimental results.

[1]  Harada Kousuke,et al.  Use of ESR for deterioration diagnosis of electrolytic capacitor , 1993 .

[2]  Eckhard Prof. Wolfgang,et al.  Advanced IGBT modules for railway traction applications : Reliability testing , 1998 .

[3]  Peter Tavner,et al.  Condition Monitoring for Device Reliability in Power Electronic Converters: A Review , 2010, IEEE Transactions on Power Electronics.

[4]  Wei Wang,et al.  On-Chip Aging Sensor Circuits for Reliable Nanometer MOSFET Digital Circuits , 2010, IEEE Transactions on Circuits and Systems II: Express Briefs.

[5]  Huifeng Chen,et al.  Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects , 2014, IEEE Transactions on Device and Materials Reliability.

[6]  Sankalita Saha,et al.  Accelerated aging with electrical overstress and prognostics for power MOSFETs , 2011, IEEE 2011 EnergyTech.

[7]  L. Dupont,et al.  Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review , 2012, IEEE Transactions on Power Electronics.

[8]  Y. Yu,et al.  Compact Thermal Resistor-Capacitor-Network Approach to Predicting Transient Junction Temperatures of a Power Amplifier Module , 2012, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[9]  M.L. Gasperi,et al.  Life prediction modeling of bus capacitors in AC variable-frequency drives , 2005, IEEE Transactions on Industry Applications.

[10]  N. Narendran,et al.  An Accelerated Test Method for Predicting the Useful Life of an LED Driver , 2011, IEEE Transactions on Power Electronics.

[11]  Andreas Alan Beutel.  A novel test method for minimising energy costs in IGBT power cycling studies , 2008 .

[12]  Hua Zhang,et al.  A study of EOS failures in power IGBT modules , 1998, 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105).

[13]  Pascal Venet,et al.  A Real-Time Predictive-Maintenance System of Aluminum Electrolytic Capacitors Used in Uninterrupted Power Supplies , 2010 .

[14]  G. Nicoletti,et al.  Fast power cycling test of IGBT modules in traction application , 1997, Proceedings of Second International Conference on Power Electronics and Drive Systems.

[15]  Michel Mermet-Guyennet,et al.  Revisiting power cycling test for better life-time prediction in traction , 2007, Microelectron. Reliab..

[16]  Pascal Venet,et al.  Failure prediction of electrolytic capacitors during operation of a switchmode power supply , 1998 .

[17]  G. Coquery,et al.  Failure criteria for long term Accelerated Power Cycling Test linked to electrical turn off SOA on IGBT module. A 4000 hours test on 1200A–3300V module with AlSiC base plate , 2000 .

[18]  Volker Pickert,et al.  On-line Monitoring of the MOSFET Device Junction Temperature by Computation of the Threshold Voltage , 2006 .