论文信息 - SiC super GTO thyristor technology development: Present status and future perspective

SiC super GTO thyristor technology development: Present status and future perspective

Power devices made on Silicon Carbide (SiC) are expected to offer significant advantages over silicon due to its unique material properties. For pulse power applications, SiC Gate Turn-Off thyristors (GTOs) have been pursued as a substitute for present silicon-based, pulsed-power switches. An update on the device's performance since the pulse work presented at the 2009 Pulse Power Conference is highlighted in this paper. Detailed reviews of the development history, state of the art, and future perspective for developing 15 kV SiC GTOs are provided. Two of the latest results are presented in this paper: (1) A novel termination, utilizing negative bevel termination, has been used in high voltage SiC GTOs, resulting in a blocking voltage of 12 kV, (2) For the first time, we have demonstrated large area optically triggered GTOs made on SiC with ultrafast turnon speed of 70 ns.

[1] A. Agarwal,et al. SiC Power Devices for Microgrids , 2010, IEEE Transactions on Power Electronics.

[2] Anant K. Agarwal,et al. 9 kV, 1 cm2 SiC Gate Turn-Off Thyristors , 2010 .

[3] Tsunenobu Kimoto,et al. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation , 2007 .

[4] B. V. Shanabrook,et al. Lifetime-limiting defects in n− 4H-SiC epilayers , 2006 .

[5] Stephen E. Saddow,et al. Advances in silicon carbide processing and applications , 2004 .

[6] A. Agarwal,et al. SiC power-switching devices-the second electronics revolution? , 2002, Proc. IEEE.

[7] A. Agarwal,et al. Optical Switch-On of Silicon Carbide Thyristor , 2002 .

[8] A. Agarwal,et al. Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors , 2002 .

[9] Alex Q. Huang,et al. Comparison of the state-of-the-art high power IGBTs, GCTs and ETOs , 2000, APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058).