论文信息 - DBR lasers emitting at 1060 nm with first-order grating in InGaP waveguide layer

DBR lasers emitting at 1060 nm with first-order grating in InGaP waveguide layer

The realisation of DBR diode lasers with a first-order grating fabricated by holographic lithography in an InGaP waveguide layer is described for the first time. The lasers show excellent characteristics with a threshold current density of 100 A/cm/sup 2/ and a CW output power of 75 mW at 25/spl deg/C.

Andreas Klehr | Wolfgang Stolz | Arne Knauer | L. Hofmann | V. B. Smirnitski

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