A Surface-Field-Based Model for Nanowire MOSFETs With Spatial Variations of Doping Profiles

We report a novel method to solve the nonlinear 1-D Poisson's equation for the gate-all-around (GAA) nanowire MOSFETs with nonuniform doping profiles. An algebraic relation between the electric field and potential is identified to develop a surface-field-based compact model. Drain current is derived from the oxide-interface boundary condition to avoid the complicated surface-potential approach. As verified by the TCAD simulations, this analytic model is capable of continuously covering all operating regions of GAA nanowire MOSFETs with slowly varying doping profiles.

[1]  Denis Flandre,et al.  Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications , 2007 .

[2]  Jae-Hyuk Ahn,et al.  A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part II: Drain Current Model , 2013, IEEE Transactions on Electron Devices.

[3]  Jean-Pierre Colinge,et al.  FinFETs and Other Multi-Gate Transistors , 2007 .

[4]  G. Gildenblat,et al.  PSP-based scalable compact FinFET model , 2007 .

[5]  B. Iñíguez,et al.  Continuous analytic I-V model for surrounding-gate MOSFETs , 2004, IEEE Electron Device Letters.

[6]  C. Sah,et al.  Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆ , 1966 .

[7]  Sungho Kim,et al.  A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part I: Charge Model , 2013, IEEE Transactions on Electron Devices.

[8]  Sriramkumar Venugopalan,et al.  From poisson to silicon - advancing compact spice models for ic design , 2013 .

[9]  P. Gupta,et al.  Device- and Circuit-Level Variability Caused by Line Edge Roughness for Sub-32-nm FinFET Technologies , 2012, IEEE Transactions on Electron Devices.

[10]  N. Collaert,et al.  Dopant and carrier profiling for 3D-device architectures , 2011, 11th International Workshop on Junction Technology (IWJT).

[11]  Mohan Vamsi Dunga,et al.  Nanoscale CMOS modeling , 2008 .

[12]  D. Monroe,et al.  Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs , 2000, IEEE Electron Device Letters.

[13]  B. Iñíguez,et al.  Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations , 2011 .

[14]  M. Rudan,et al.  Design Considerations and Comparative Investigation of Ultra-Thin SOI, Double-Gate and Cylindrical Nanowire FETs , 2006, 2006 European Solid-State Device Research Conference.

[15]  Y. Chen,et al.  A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model , 2001 .

[16]  P. Eyben,et al.  Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution , 2010, 2010 Symposium on VLSI Technology.

[17]  Ali M. Niknejad,et al.  BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations , 2012 .

[18]  F. Gamiz,et al.  Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects , 2008, IEEE Transactions on Electron Devices.

[19]  H. A. Hamid,et al.  Explicit continuous model for long-channel undoped surrounding gate MOSFETs , 2005, IEEE Transactions on Electron Devices.

[20]  Dheeraj Sharma,et al.  Precise analytical model for short channel Cylindrical Gate (CylG) Gate-All-Around (GAA) MOSFET , 2013 .

[21]  V. Trivedi,et al.  Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs , 2005, IEEE Electron Device Letters.

[22]  Chenming Hu,et al.  Modeling Advanced FET Technology in a Compact Model , 2006, IEEE Transactions on Electron Devices.