Formation of 0.1 µm N+/P and P+/N junctions by doped silicide technology

A new technique to form very shallow, low resistance, and high surface concentration junctions by diffusing the dopant from doped WSi<inf>2</inf>into the silicon has been developed. The junctions were formed by ion implanting WSi<inf>2</inf>films with As⁺, P⁺or B⁺which then acted as the diffusion sources. Subsequent high temperature processing simultaneously forms the junctions and ohmic contacts to the diffusion areas. N⁺/P and P⁺/N diodes with very shallow juctions have been formed by this doped silicide technology. Dopant diffusion in the WSi<inf>2</inf>and redistribution behavior in the SiO<inf>2</inf>/WSi<inf>2</inf>/Si structure with a wide range of implant doses, anneal temperatures and times have been characterized.