A self‐consistent model for quantum well infrared photodetectors

We present the results of a new model for the simulation of quantum well infrared photodetectors (QWIPs) both in dark conditions and under illumination. This model takes into account the elementary mechanisms involved in the detection process (injection at the contacts, balance between capture and emission in each well) in a self‐consistent way. The main feature emerging from the model is the redistribution of the electric field along the structure in order to maintain current conservation. The calculated dark current, electrical noise, responsivity, and detectivity of different QWIP structures are compared with experimental measurements and the agreement is found to be fairly good. This model may be considered as a step toward more powerful simulation tools for QWIPs.

[1]  W. J. Parrish,et al.  Long wavelength infrared 128*128 Al/sub x/Ga/sub 1-x/As/GaAs quantum well infrared camera and imaging system , 1993 .

[2]  E. Rosencher,et al.  Injection mechanism at contacts in a quantum‐well intersubband infrared detector , 1992 .

[3]  S. Adachi,et al.  Properties of Aluminium Gallium Arsenide , 1993 .

[4]  Albert Rose,et al.  Concepts in photoconductivity and allied problems , 1963 .

[5]  M. Pate,et al.  Emission mechanisms and band filling effects in GaAs–AlGaAs V-groove quantum wires , 1997 .

[6]  Emmanuel Rosencher,et al.  Intersubband transitions in quantum wells , 1992 .

[7]  R. Leibenguth,et al.  Optical and transport properties of single quantum well infrared photodetectors , 1993 .

[8]  M. Buchanan,et al.  Dark current in quantum well infrared photodetectors , 1993 .

[9]  M. Asom,et al.  Tunneling emitter undoped quantum‐well infrared photodetector , 1993 .

[10]  B. F. Levine,et al.  Quantum‐well infrared photodetectors , 1993 .

[11]  J. Y. Andersson,et al.  Quantum Well Intersubband Transition Physics and Devices , 1994 .

[12]  Ali Shakouri,et al.  Control of Electric Field Domain Formation in Multiquantum Well Structures , 1993 .

[13]  Ronald E. Leibenguth,et al.  Long-wavelength 128*128 GaAs quantum well infrared photodetector arrays , 1991 .

[14]  J. Nagle,et al.  Emission and capture of electrons in multiquantum-well structures , 1994 .

[15]  W. A. Beck,et al.  Photoconductive gain and generation‐recombination noise in multiple‐quantum‐well infrared detectors , 1993 .

[16]  E. Rosencher,et al.  Determination of electron recombination parameters in GaAs/AlGaAs quantum wells by impedance spectroscopy , 1993 .

[17]  E. Rosencher,et al.  Intersubband optical transients in multi‐quantum‐well structures , 1993 .

[18]  J. Y. Andersson,et al.  Grating‐coupled quantum‐well infrared detectors: Theory and performance , 1992 .

[19]  C. Weisbuch,et al.  Quantum Semiconductor Structures: Fundamentals and Applications , 1991 .

[20]  Hui Chun Liu,et al.  Photoconductive gain mechanism of quantum‐well intersubband infrared detectors , 1992 .