论文信息 - Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm2 is obtained for a beryllium base doping as high as 8 × 1019 cm−3. The base sheet resistance of 140 Ω/□ is among the lowest reported vulues.

F. Alexandre | J. Dangla | J. Benchimol | V. Amarger | C. Dubon-Chevallier

[1] M. Filoche,et al. Electrical characterisation of the p-type dopant diffusion of highly doped AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVD , 1990 .

[2] A. S. Jordan,et al. GaAs-AlGaAs HBT with carbon doped base layer grown by MOMBE , 1990 .

[3] W. Tsang,et al. Chemical beam epitaxy , 1988, IEEE Circuits and Devices Magazine.

[4] H. Kroemer,et al. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy , 1985, IEEE Electron Device Letters.