论文信息 - Simulation of transient turn-off characteristics of a trench emitter insulated gate bipolar transistor (IGBT)

Simulation of transient turn-off characteristics of a trench emitter insulated gate bipolar transistor (IGBT)

The modelling of transient turn-off characteristics in an IGBT structure is presented. The semiconductor equations are solved in two dimensions with physical effects such as carrier-carrier scattering mobility and SRH and Auger recombination included. The I-V characteristics, turn-off behaviour and hole concentration have been investigated. Comparison between simulation and measurement shows a good qualitative and quantitative agreement.

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