105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers
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G. Le Carval | M. Vinet | S. Deleonibus | Laurent Clavelier | Helen Grampeix | K. Romanjek | A. Pouydebasque | Loic Sanchez | C. Le Royer | R. Truche | Claude Tabone | Chrystel Deguet | S. Soliveres | H. Grampeix | R. Truche | J. Hartmann | S. Deleonibus | C. Tabone | M. Vinet | K. Romanjek | A. Pouydebasque | L. Sanchez | L. Clavelier | G. Carval | C. L. Royer | C. Deguet | S. Soliveres | J. M. Hartmann | M.-C. Roure | M. Roure
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