论文信息 - A SITH-model for CAE in power-electronics

A SITH-model for CAE in power-electronics

A static and dynamic model of the Static Induction Thyristor (SITh) is developed, particularly considering the charge in the wide, low doped base-layer which is conductivity-modulated during on-state. An equivalent-circuit of the model is derived, consisting of a modified hvo-transistor-structure (3 Junctions) plus a Static Induction Transistor (SIT) which represents the unipolar part of the device. The implementation in a nehvorksimulator, here IG-SPICE, is achieved by using FORTRANSubroutines as 'user-defined controlled sources'. Simulations of DC and transient characteristics of the SITh in common circuits are discussed and show good agreement with measurements.

D. Metzner | D. Schroder

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