Infrared focal plane array technology
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[1] R. Petritz. Fundamentals of Infrared Detectors , 1959, Proceedings of the IRE.
[2] R. Jones. Proposal of the Detectivity D** for Detectors Limited by Radiation Noise† , 1960 .
[3] T. Harman,et al. Chapter 4 Single-Crystal Lead-Tin Chalcogenides , 1970 .
[4] G. E. Smith,et al. Charge coupled semiconductor devices , 1970, Bell Syst. Tech. J..
[5] Paul W. Kruse,et al. Chapter 2 Indium Antimonide Photoconductive and Photoelectromagnetic Detectors , 1970 .
[6] M. Blouke,et al. Sensitivity limits for extrinsic and intrinsic infrared detectors , 1973 .
[7] Y. Itakura,et al. Statistical properties of the background noise for the atmospheric windows in the intermediate infrared region , 1974 .
[8] Doran J. Baker,et al. A direct coupled low noise preamplifier for cryogenically cooled photoconductive i.r. detectors , 1974 .
[9] R. D. Nelson,et al. Application of charge-coupled devices to infrared detection and imaging , 1975, Proceedings of the IEEE.
[10] S. R. Hawkins,et al. Infrared Detectors: An Overview , 1975 .
[11] J. M. Lloyd,et al. Thermal Imaging Systems , 1975 .
[12] D.F. Barbe,et al. Imaging devices using the charge-coupled concept , 1975, Proceedings of the IEEE.
[13] H. Barhydt. Performance of Nearly BLIP Detectors in Infrared Sensors , 1976 .
[14] N. Sclar. Extrinsic silicon detectors for 3–5 and 8–14 μm , 1976 .
[15] Gerald J. Michon,et al. Charge-injection imaging: Operating techniques and performances characteristics , 1976 .
[16] Infrared Charge Transfer Devices: The Silicon Approach , 1977 .
[17] W. Anderson,et al. Tunnel current limitations of narrow bandgap infrared charge coupled devices , 1977 .
[18] P. Blood,et al. The electrical characterisation of semiconductors , 1978 .
[19] InSb charge-injection device imaging array , 1978 .
[20] N. Bluzer,et al. Buffered direct injection of photocurrents into charge-coupled devices , 1978, IEEE Transactions on Electron Devices.
[21] C. T. Elliott,et al. Sulphur doped silicon IR detectors , 1978 .
[22] D. T. Cheung,et al. Infrared focal planes in intrinsic semiconductors , 1978 .
[23] C. Roundy. Solid-state pyroelectric infrared image converter , 1979 .
[24] D. Schroder. Extrinsic silicon monolithic focal plane arrays a short review , 1979, 1979 International Electron Devices Meeting.
[25] A. van der Ziel,et al. Flicker Noise in Electronic Devices , 1979 .
[26] James A. Hall. Arrays and Charge-Coupled Devices , 1980 .
[27] Sven C. Nystrom. Thermal Imaging Systems Utilizing Pyroelectric Detector Arrays Coupled With Solid-State Readout Techniques , 1980, Photonics West - Lasers and Applications in Science and Engineering.
[28] J. Reboul,et al. CCD Readout of infrared hybrid focal-plane arrays , 1980, IEEE Transactions on Electron Devices.
[29] Monolithic HgCdTe charge transfer device infrared imaging arrays , 1980, IEEE Transactions on Electron Devices.
[30] S. Iwasa,et al. 1/f Noise in (Hg, Cd)Te photodiodes , 1980, IEEE Transactions on Electron Devices.
[31] N. Sclar. Temperature limitations for IR extrinsic and intrinsic photodetectors , 1980, IEEE Transactions on Electron Devices.
[32] Hybrid IRCCD imaging array , 1980, IEEE Transactions on Electron Devices.
[33] T.L. Koch,et al. A fully monolithic InSb infrared CCD array , 1980, IEEE Transactions on Electron Devices.
[34] Steven Eliot Lang,et al. Pyroelectric/CCD Hybrid Focal Plane , 1980, Photonics West - Lasers and Applications in Science and Engineering.
[35] R. Chapman,et al. HgCdTe charge-coupled device technology∗ , 1980 .
[36] R. Baron,et al. Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties , 1981, Other Conferences.
[37] Kuen Chow,et al. Source-Coupled HgCdTe Staring Hybrid Focal Planes For Tactical Applications , 1981, Photonics West - Lasers and Applications in Science and Engineering.
[38] William S. Chan. Detector-Charge-Coupled Device (CCD) Interface Methods , 1981, Optics & Photonics.
[39] D. H. Pommerrenig,et al. Hybrid Silicon Focal Plane Development: An Update , 1981, Photonics West - Lasers and Applications in Science and Engineering.
[40] R. A. Ballingall,et al. Electronically scanned cmt detector array for the 8-14 μm band , 1982 .
[41] The pyroelectric/CCD focal plane hybrid: Analysis and design for direct charge injection☆ , 1982 .
[42] A. Lopez‐Otero. Growth of some important narrow gap semiconductors , 1982 .
[43] K. J. Riley,et al. Background and temperature dependent current‐voltage characteristics of HgCdTe photodiodes , 1982 .
[44] Rudolf Kingslake,et al. Optical System Design , 1983 .
[45] H. B. Morris,et al. Charge Imaging Matrix For Infrared Scanning , 1983, Other Conferences.
[46] A. F. Milton. Readout Mechanisms For Infrared Focal Plane Arrays , 1983, Optics & Photonics.
[47] P. M. Raccah,et al. Comparative studies of mercury cadmium telluride single crystal and epitaxial , 1983 .
[48] S.S. Bencuya,et al. Charge-packet splitting in charge-domain devices , 1984, IEEE Transactions on Electron Devices.
[49] Jacob Y. Wong,et al. The Advent Of Three-Dimensional Imaging Array Architectures: A Perspective , 1984, Optics & Photonics.
[50] E. Dereniak,et al. Optical radiation detectors , 1984 .
[51] Characteristics and readout of an InSb CID two-dimensional scanning TDI array , 1985, IEEE Transactions on Electron Devices.
[52] I. M. Baker,et al. Photovoltaic CdHgTe - Silicon Hybrid Focal Planes , 1985, Optics & Photonics.
[53] J. Silverman,et al. The theory of hot-electron photoemission in Schottky-barrier IR detectors , 1985, IEEE Transactions on Electron Devices.
[54] W. Wolfe,et al. The Infrared Handbook , 1985 .
[55] M. Pessa,et al. Hg1−xCdxTe‐Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applications , 1985 .
[56] A. Goetz,et al. Optical remote sensing of the earth , 1985, Proceedings of the IEEE.
[57] W. Kosonocky,et al. 160 × 244 Element PtSi Schottky-barrier IR-CCD image sensor , 1985, IEEE Transactions on Electron Devices.
[58] H. K. Chung,et al. Origin of 1/f noise observed in Hg0.7Cd0.3Te variable area photodiode arrays , 1985 .
[59] M. Kruer,et al. Influence Of Nonuniformity On Infrared Focal Plane Array Performance , 1985 .
[60] T. Kleinpenning,et al. 1/ f noise in p‐n junction diodes , 1985 .
[61] S. Botts. Design and performance of a SWIR HgCdTe hybrid module for multispectral linear array/landsat applications , 1985, IEEE Transactions on Electron Devices.
[62] Thomas H. Myers,et al. InSb: A Key Material for IR Detector Applications , 1986 .
[63] James D. Murphy. Infrared Detector Materials Research - A Viewpoint , 1986, Other Conferences.
[64] Superlattices: Progress and prospects , 1986 .
[65] Curtiss A. Niblack,et al. Recent Developments on a 128 x 128 Indium Antimonide/FET Switch Hybrid Imager For Low-Background Applications , 1986, Optics & Photonics.
[66] Dean A. Scribner,et al. Infrared Focal Plane Array Technology Development For Navy Applications , 1987 .
[67] J. C. Brice,et al. Properties of mercury cadmium telluride , 1987 .
[68] A. S. Jensen,et al. Current Readout Of Infrared Detectors , 1987 .
[69] R. Balcerak,et al. Evolution of a new semiconductor product: mercury cadmium telluride focal plane arrays , 1987 .
[70] Masafumi Kimata,et al. A 512/spl times/512-element PtSi Schottky-barrier infrared image sensor , 1987 .
[71] L. R. Dawson,et al. III--V strained layer supperlattices for long-wavelength detector applications: Recent progress , 1987 .
[72] Eric R. Fossum. Charge-Coupled Computing For Focal Plane Image Preprocessing , 1987 .
[73] Charge imaging matrix arrays for advanced IR focal planes , 1988 .
[74] C. Bethea,et al. GaAs/AlGaAs quantum-well, long-wavelength infra-red (LWIR) detector with a detectivity comparable to HgCdTe , 1988 .
[75] Y. Nemirovsky,et al. Admittance measurements of metal–insulator–semiconductor devices in p‐type HgCdTe , 1988 .
[76] Freeman D Shepherd. Silicide Infrared Staring Sensors , 1988, Defense, Security, and Sensing.
[77] K R. Zanio,et al. HgCdTe Photovoltaic Detectors On Si Substrates , 1987, Defense, Security, and Sensing.
[78] A. Rogalski. Analysis of the R0A product in n+-p Hg1−xCdxTe photodiodes , 1988 .
[79] M. Kinch,et al. Metal–insulator–semiconductor properties of HgTe–CdTe superlattices , 1988 .
[80] James A. Cutts. Focal Plane Array Technologies For NASA Space Systems , 1988, Other Conferences.
[81] C. Kirkpatrick. Making GaAs integrated circuits , 1988, Proc. IEEE.
[82] R. P. Khosla,et al. Solid-state image sensors steadily advancing , 1988 .
[83] John C. Carson,et al. Applications Of Advanced "Z" Technology Focal Plane Architectures , 1988, Defense, Security, and Sensing.
[84] Dean A. Scribner,et al. Physical Limitations To Nonuniformity Correction In IR Focal Plane Arrays , 1988, Other Conferences.
[85] C. Maissen,et al. Photovoltaic infrared sensors in heteroepitaxial PbTe on Si , 1988 .
[86] B. Tsaur,et al. Pt-Ir silicide Schottky-barrier IR detectors , 1988, IEEE Electron Device Letters.
[87] R. A. Reynolds,et al. The II–VI compounds: 30 years of history and the potential for the next 30 years , 1989 .
[88] James R. Janesick,et al. Recent Developments In Large Area Scientific CCD Image Sensors , 1989, Photonics West - Lasers and Applications in Science and Engineering.
[89] David E. Ludwig,et al. On-Focal Plane Analog-To-Digital Conversion With Detector Gain And Offset Compensation , 1989, Defense, Security, and Sensing.
[90] Yael Nemirovsky,et al. Passivation of mercury cadmium telluride surfaces , 1989 .
[91] M. McNutt,et al. 128x128-element IrSi Schottky-barrier focal plane arrays for long-wavelength infrared imaging , 1989, IEEE Electron Device Letters.
[92] LWIR detector arrays based on nipi superlattices , 1990 .
[93] R.K. Kirschman,et al. Low-temperature electronics , 1990, IEEE Circuits and Devices Magazine.