论文信息 - Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy

Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy

Anomalous behavior in Hall data of molecular beam epitaxial In0.52Al0.48As/InP for T≥400 K suggests the presence of alloy clustering. The relaxation time for alloy clustering has been determined and analysis of measured data gives an estimate of composition fluctuation and cluster size. Evidence of clustering in the same samples is also obtained from the measured velocity‐field characteristics, low‐temperature photoluminescence data, and carrier impact ionization coefficients.

P. Bhattacharya | Jasprit Singh | W. Hong

[1] P. Bhattacharya,et al. Effect of alloy clustering on the high‐temperature electron mobility in In1−xGaxAsyP1−y , 1985 .

[2] F. Capasso,et al. Impact ionization rates for electrons and holes in Al0.48In0.52As , 1984 .

[3] D. Welch,et al. Optical properties of GaInAs/AlInAs single quantum wells , 1983 .

[4] J. Marsh. Effects of compositional clustering on electron transport in In0.53Ga0.47As , 1982 .

[5] G. Stillman,et al. Alloy clustering and its effect on impact ionization in ternary III–V compounds , 1982 .

[6] T. Drummond,et al. Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52 As heterojunctions grown by molecular beam epitaxy , 1982 .

[7] T. Drummond,et al. Clustering in molecular‐beam epitaxial AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers , 1981 .

[8] Karl Hess,et al. Alloy clustering in AlxGa1-xAs-GaAs quantum-well heterostructures , 1980 .

[9] J. W. Harrison,et al. Alloy scattering in ternary III-V compounds , 1976 .

[10] M. Neuberger,et al. Handbook of Electronic Materials , 1971 .