Radiation-induced degradation of optoelectronic sensors

Space system undergo particularly hard natural radiation environment, but can also potentially be subject to the radiations injected in low earth orbit by the explosion of a nuclear weapons. The increasing use of optoelectronic components in space systems makes the risk assessment regarding the radiation effects of an increasing interest. This paper presents recent results about the degradation of optoelectronic devices in term of atomic displacements. This paper Most of this work has been developed under the EDA contract JIP-ICET2 A-1341-RT-GP within the CapTech Technologies for Components and Modules’ (TCM) in EDA. (Tracking #: SD102-11)

[1]  Cheryl J. Dale,et al.  Displacement damage in GaAs structures , 1988 .

[2]  C. Inguimbert,et al.  Equivalent Displacement Damage Dose for On-Orbit Space Applications , 2012, IEEE Transactions on Nuclear Science.

[3]  Robert J. Walters,et al.  NIEL and damage correlations for high-energy protons in gallium arsenide devices , 2001 .

[4]  Robert J. Walters,et al.  Damage correlations in semiconductors exposed to gamma, electron and proton radiations , 1993 .

[5]  Geoffrey P. Summers,et al.  Displacement damage analogs to ionizing radiation effects , 1995 .

[6]  R Marrs Contribution of Neutron Beta Decay to Radiation Belt Pumping from High Altitude Nuclear Explosion , 2002 .

[7]  J. R. Srour,et al.  Review of displacement damage effects in silicon devices , 2003 .

[8]  T. Nuns,et al.  Gamma and Electron NIEL Dependence of Irradiated GaAs , 2017, IEEE Transactions on Nuclear Science.

[9]  A. Dell'Acqua,et al.  Geant4 - A simulation toolkit , 2003 .

[10]  Matthieu Beaumel,et al.  Cobalt-60, Proton and Electron Irradiation of a Radiation-Hardened Active Pixel Sensor , 2010, IEEE Transactions on Nuclear Science.

[11]  G. Rolland,et al.  “Effective NIEL” in Silicon: Calculation Using Molecular Dynamics Simulation Results , 2009, IEEE Transactions on Nuclear Science.

[12]  J. R. Srour,et al.  Universal damage factor for radiation-induced dark current in silicon devices , 2000 .

[13]  T. Nuns,et al.  NIEL Scaling: Comparison With Measured Defect Introduction Rate in Silicon , 2011, IEEE Transactions on Nuclear Science.

[14]  Jeffrey H. Warner,et al.  A comparison between p+n and n+p GaAs displacement damage coefficients following proton irradiation , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.

[15]  C. Inguimbert,et al.  NEMO: A Code to Compute NIEL of Protons, Neutrons, Electrons, and Heavy Ions , 2005, IEEE Transactions on Nuclear Science.

[16]  T. Nuns,et al.  Modeling the Dark Current Non-Uniformity of Image Sensors With GEANT4 , 2014, IEEE Transactions on Nuclear Science.