Enhanced heterostructure field effect transistor CAD model suitable for simulation of mixed mode circuits

We describe a new enhanced model for deep submicron heterostructure field effect transistors (HFET's) suitable for implementation in computer aided design (CAD) software packages such as SPICE. The model accurately reproduces both above-threshold and subthreshold characteristics of both n- and p-channel deep submicron HFET's over the temperature range 250-450 K. The current-voltage (I-V) characteristics are described by a single, continuous, analytical expression for all regimes of operation, thereby improving convergence. The physics-based model includes effects such as velocity saturation in the channel, drain-induced barrier lowering (DIBL), finite output conductance in saturation, frequency dispersion, and temperature dependence. The output resistance and the transconductance are accurately reproduced, making the model suitable for simulation of mixed mode (digital/analog) circuits. The model has been extensively verified against experimental data for two HFET technologies with gate lengths down to 0.3 /spl mu/m.

[1]  Michael S. Shur,et al.  Semiconductor Device Modeling For VLSI , 1993 .

[2]  Michael S. Shur,et al.  Gaas Devices And Circuits , 1987 .

[3]  T. A. Fjeldly,et al.  A new charge conserving capacitance model for GaAs MESFET's , 1997 .

[4]  I. Angelov,et al.  Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .

[5]  Raymond F. Jurgens,et al.  High-Temperature Electronics Applications in Space Exploration , 1982, IEEE Transactions on Industrial Electronics.

[6]  Steven M. Baier,et al.  Complementary heterostructure FET technology for low power, high speed digital applications , 1996 .

[7]  D. Delagebeaudeuf,et al.  Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET , 1982, IEEE Transactions on Electron Devices.

[8]  Michael S. Shur,et al.  Heterostructure insulated gate field effect transistors operated in hot electron-regime , 1994 .

[9]  Randall Kirschman.  The Requirements for High Temperature Electronics in a Future High Speed Civil Transport , 1999 .

[10]  Michael S. Shur,et al.  TEMPERATURE DEPENDENCE OF THE I-V CHARACTERISTICS OF MODULATION-DOPED FETs. , 1983 .

[11]  Trond Ytterdal,et al.  UNIFIED GaAs MESFET MODEL FOR CIRCUIT SIMULATIONS , 1992 .

[12]  Michael Shur,et al.  SIMULATION AND MODELING OF COMPOUND SEMICONDUCTOR DEVICES , 1995 .

[13]  Steven M. Baier,et al.  High temperature performance and operation of HFETs , 1996 .

[14]  T. Mimura,et al.  A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions , 1980 .

[15]  Michael S. Shur,et al.  Distributive nature of gate current and negative transconductance in heterostructure field-effect transistors , 1989 .

[16]  Michael S. Shur,et al.  Electron density of the two‐dimensional electron gas in modulation doped layers , 1983 .

[17]  Michael S. Shur,et al.  Introduction to electronic devices , 1995 .

[18]  Michael S. Shur,et al.  Introduction to Device Modeling and Circuit Simulation , 1997 .

[19]  Michael S. Shur,et al.  Enhanced CAD model for gate leakage current in heterostructure field effect transistors , 1996 .

[20]  Michael S. Shur,et al.  Low field mobility of 2‐d electron gas in modulation doped AlxGa1−xAs/GaAs layers , 1983 .

[21]  J. Meyer.  MOS models and circuit simulations , 1971 .

[22]  D. E. Grider,et al.  Complementary III-V heterostructure FETs for low power integrated circuits , 1990, International Technical Digest on Electron Devices.

[23]  I. R. Mactaggart,et al.  A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology , 1991, [1991] GaAs IC Symposium Technical Digest.

[24]  K. Suyama,et al.  MOSFET modeling for analog circuit CAD: Problems and prospects , 1993, Proceedings of IEEE Custom Integrated Circuits Conference - CICC '93.

[25]  Michael S. Shur,et al.  Double Channel AlGaN/GaN Heterostructure Field Effect Transistor , 1998 .

[26]  M. Shur,et al.  Unified charge control model and subthreshold current in heterostructure field-effect transistors , 1990, IEEE Electron Device Letters.

[27]  J. Graffeuil,et al.  Output conductance frequency dispersion and low-frequency noise in HEMTs and MESFETs , 1989 .

[28]  Steven M. Baier,et al.  A new and simple model for GaAs heterojunction FET gate characteristics , 1988 .