Bias-dependent tunable response of normal incidence long wave infrared quantum dot detectors

We report development of array compatible individual high-performance quantum dot pixel structures that allow for spectral tuning by the application of an external bias. Custom-made post-processing algorithms have been used to further enhance and optimize their tuning and spectral-separation capability far beyond the device limit. The dots-in-a-well (DWELL) detector consists of 10 layers of InAs dots placed in a thin InGaAs well, which in turn is placed in a GaAs matrix. The DWELL structure provides good confinement for the carriers trapped in the quantum dots.