Novel schemes of trapping regime aimed on efficiency enhancement in free-electron devices

Novel schemes of the trapping regime in the free-electron devices were studied. Proof-of-principle experiments on implementation of “non-resonant” trapping were performed in Ka-band and a high-efficiency ultra-wideband freeelectron maser-amplifier has been demonstrated. For shorter-wavelength free-electron lasers (FELs), we describe two different ways to use the regime of so-called “multi-stage” trapping: a narrow-band FEL-amplifier and a FEL operating in multi-frequency SASE regime. The advantages of the proposed regimes for increasing the FEL efficiency and for decreasing the sensitivity to the spread in parameters of the feeding electron beams are demonstrated.

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