Investigation of GaN channel thickness on the channel mobility in AlGaN/GaN HEMTs grown on sapphire substrate
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T. Ma | Jae-won Do | S. Chang | M. Bhuiyan | C. Won | H. W. Jung | M. Shin | J.-W. Lim | K. J. Cho | J.-H. Lee | K. Cho | J. Lim | H. W. Jung