An overview of non-volatile memory technology and the implication for tools and architectures

Novel nonvolatile memory technologies are gaining significant attentions from semiconductor industry in the competition of universal memory development. We used Spin-Transfer Torque Random Access Memory (STT-RAM) and Resistive Random Access Memory (R-RAM) as examples to discuss the implication of emerging nonvolatile memory for tools and architectures. Three aspects, including device and memory cell modeling, device/circuit co-design consideration and novel memory architecture, are discussed in details. The goal of these discussions is to design a high-density, low-power, high-performance nonvolatile memory with simple architecture and minimized circuit design complexity.

[1]  Jon M. Slaughter,et al.  Magnetoresistive random access memory using magnetic tunnel junctions , 2003, Proc. IEEE.

[2]  D. Dimitrov,et al.  Spin Torque Induced Magnetization Switching Variations , 2009, IEEE Transactions on Magnetics.

[3]  J. C. Sloncxewski.  Current-driven excitation of magnetic multilayers , 2003 .

[4]  D. Dimitrov,et al.  Thermal fluctuation effects on spin torque induced switching: Mean and variations , 2008 .

[5]  M. Mitkova,et al.  Programmable metallization cell memory based on Ag-GeS and Cu-GeS solid electrolytes Conference , 2000 .

[6]  M. Hosomi,et al.  A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[7]  E. Belhaire,et al.  Macro-model of Spin-Transfer Torque based Magnetic Tunnel Junction device for hybrid Magnetic-CMOS design , 2006, 2006 IEEE International Behavioral Modeling and Simulation Workshop.

[8]  Berger.  Emission of spin waves by a magnetic multilayer traversed by a current. , 1996, Physical review. B, Condensed matter.

[9]  Yu Cao,et al.  Predictive Technology Model for Nano-CMOS Design Exploration , 2006, 2006 1st International Conference on Nano-Networks and Workshops.

[10]  J. Slonczewski.  Current-driven excitation of magnetic multilayers , 1996 .

[11]  Guido Torelli,et al.  A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage , 2009, IEEE Journal of Solid-State Circuits.

[12]  S. Yasuda,et al.  Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution , 2007, cond-mat/0702564.

[13]  A. Pohm,et al.  Curie point written magnetoresistive memory , 2000 .