Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Fluctuation technique is used to measure hot-phonon lifetime in dual channel GaN-based configuration proposed to support high-power operation at high frequencies. The channel is formed of a composite Al0.1Ga0.9N/GaN structure situated in an Al0.82In0.18N/AlN/Al0.1Ga0.9N/GaN heterostructure. According to capacitance–voltage measurements and simultaneous treatment of Schrodinger–Poisson equations, the mobile electrons in this dual channel configuration form a camelback density profile at elevated hot-electron temperatures. The hot-phonon lifetime was found to depend on the shape of the electron profile rather than solely on its sheet density. The camelback channel with an electron sheet density of 1.8 × 1013 cm−2 demonstrates ultrafast decay of hot phonons at hot-electron temperatures above 600 K: the hot-phonon lifetime is below ∼60 fs in contrast to ∼600 fs at an electron sheet density of 1.2 × 1013 cm−2 obtained in a reference Al0.82In0.18N/AlN/GaN structure at 600 K. The results suggest a suitable metho...

[1]  Lester F. Eastman,et al.  Hot-phonon-induced velocity saturation in GaN , 2004 .

[2]  Hadis Morkoç,et al.  Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors , 2011 .

[3]  Hadis Morkoç,et al.  Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels , 2011, OPTO.

[4]  Toshiaki Matsui,et al.  30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz , 2006 .

[5]  Hadis Morkoç,et al.  Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN , 1998 .

[6]  Hadis Morko,et al.  Handbook of Nitride Semiconductors and Devices , 2008 .

[7]  Stefan K. Lai,et al.  Flash memories: Successes and challenges , 2008, IBM J. Res. Dev..

[8]  Toshiaki Matsui,et al.  AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz , 2008 .

[9]  Hadis Morkoç,et al.  Hot‐electron drift velocity and hot‐phonon decay in AlInN/AlN/GaN , 2011 .

[10]  Tetsu Kachi,et al.  Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride , 1994 .

[11]  Lester F. Eastman,et al.  Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis , 2003 .

[12]  T. Maloney,et al.  Transient and steady‐state electron transport properties of GaAs and InP , 1977 .

[13]  Hansruedi Benedickter,et al.  High-speed and low-noise AlInN/GaN HEMTs on SiC , 2011 .

[14]  J. Kuzmik,et al.  Power electronics on InAlN/(In)GaN: Prospect for a record performance , 2001, IEEE Electron Device Letters.